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  Datasheet File OCR Text:
 SMD Type
NPN Transistors KST9013
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
IC Transistors
Unit: mm
Features
+0.1 2.4-0.1
Collector Current :IC=0.5A
1
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
Excellent hFE linearity
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 25 5 500 300 150 -55 to 150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector - base breakdown voltage Collector - emitter breakdown voltage Emitter - base breakdown voltage Collector cut - off current Collector cut -off current Emitter cut - off current DC current gain Collector - emitter saturation voltage Base - emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Testconditons Ic= 100 A Ic= 0.1mA IE=100 A IE=0 IB=0 IC=0 Min 40 25 5 0.1 0.1 0.1 120 40 0.6 1.2 150 V V MHz 400 Typ Max Unit V V V A A A
VCB=40 V , IE=0 VCE=20V , IB=0 VEB= 5V , IC=0 VCE=1V, IC= 50mA VCE=1V, IC=500mA IC=500 mA, IB= 50mA IC=500 mA, IB= 50mA VCE=6V, IC= 20mA,f=30MHz
hFE Classification
Marking Rank hFE L 120 to 200 J3 H 200 to 350 J 300 to 400
+0.1 0.38-0.1
0-0.1
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1
SMD Type
KST9013
Typical Characteristics
IC Transistors
Fig.1 Static Characteristic
Fig.2 DC Current Gain
Fig.3 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage
Fig.4 Current Gain Bandwidth Product
2
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